AN ELECTROTHERMAL FUNCTIONAL-MODEL OF THE MICROWAVE FET SUITABLE FOR NONLINEAR SIMULATION

This article introduces a CAD-oriented functional model of the microwa ve FET depending on temperature as an additional state variable in add ition to the usual gate and drain voltages. The model is fully conserv ative and non-quasistatic, and thus considerably more advanced than ot her currently available empirical models. A novel parameter extraction strategy allows the simultaneous determination of the voltage and tem perature dependence of the constitutive relations, making use of a set of DC measurements and bias-dependent scattering matrices obtained at a single ambient temperature. The model can be coupled to a harmonic- balance algorithm for the efficient electrothermal simulation of tempe rature-dependent nonlinear microwave circuits, which the authors discu ssed in a previous article. (C) 1995 John Wiley & Sons, Inc.