Heterojunctions have been fabricated by deposition of amorphous galliu
m arsenide on p-type crystalline silicon. C(V) and J(V) measurements w
ere performed to determine electrical properties of these structures.
Rectifying properties have been obtained, and capacitance-voltage beha
vior indicates an abrupt interface with a main discontinuity in the va
lence bands. The forward current involves tunneling and is successfull
y explained by a multi-tunneling capture-emission model. The reverse c
urrent is probably limited by the generation process.