ELECTRICAL-PROPERTIES OF A-GAAS C-SI(P) HETEROJUNCTIONS/

Heterojunctions have been fabricated by deposition of amorphous galliu m arsenide on p-type crystalline silicon. C(V) and J(V) measurements w ere performed to determine electrical properties of these structures. Rectifying properties have been obtained, and capacitance-voltage beha vior indicates an abrupt interface with a main discontinuity in the va lence bands. The forward current involves tunneling and is successfull y explained by a multi-tunneling capture-emission model. The reverse c urrent is probably limited by the generation process.