VACUUM AND NONVACUUM SOLUTIONS OF THE QUASI-HYDRODYNAMIC SEMICONDUCTOR MODEL IN THERMAL-EQUILIBRIUM

Authors
Citation
A. Unterreiter, VACUUM AND NONVACUUM SOLUTIONS OF THE QUASI-HYDRODYNAMIC SEMICONDUCTOR MODEL IN THERMAL-EQUILIBRIUM, Mathematical methods in the applied sciences, 18(3), 1995, pp. 225-254
Citations number
11
Categorie Soggetti
Mathematical Method, Physical Science",Mathematics
ISSN journal
01704214
Volume
18
Issue
3
Year of publication
1995
Pages
225 - 254
Database
ISI
SICI code
0170-4214(1995)18:3<225:VANSOT>2.0.ZU;2-9
Abstract
The quasi-hydrodynamical model for bipolar semiconductor devices in th ermal equilibrium admits in general solutions for which the non-negati ve electron- or hole-density is not strict positive. In this paper suf ficient conditions depending on the device's data which lead to or pre vent vacuum are presented. The transformation of the model equations t o a single semilinear elliptic mixed boundary value problem for the el ectrostatic potential V reduces the vacuum-non-vacuum discussion to an investigation of the range of V. Monotonicity arguments and the emplo yment of local sub- and supersolutions allow to estimate the size as w ell as the distance from the Dirichlet boundary of the respective vacu um sets. An one-dimensional model is analysed in some detail.