AN ENHANCED TECHNIQUE FOR THE CHARACTERIZATION OF CRYSTAL-LATTICE STRAINS IN EPITAXIALLY GROWN LAYERS FROM X-RAY-DIFFRACTION PROFILES

Authors
NIKULIN AY ZAUMSEIL P
Citation
Ay. Nikulin et P. Zaumseil, AN ENHANCED TECHNIQUE FOR THE CHARACTERIZATION OF CRYSTAL-LATTICE STRAINS IN EPITAXIALLY GROWN LAYERS FROM X-RAY-DIFFRACTION PROFILES, Physica status solidi. a, Applied research, 158(2), 1996, pp. 523-527
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
158
Issue
2
Year of publication
1996
Pages
523 - 527
Database
ISI
SICI code
0031-8965(1996)158:2<523:AETFTC>2.0.ZU;2-L
Abstract
A new approach to avoid the ill-posed numerical differentiation is pro posed and implemented to enhance the method for model-independent dete rmination of crystal lattice strain profiles in epitaxially grown laye rs. A practical procedure for the numerical regularisation of a displa cement profile directly reconstructed from the X-ray diffraction data by a linear least-squares fit is applied to determine thicknesses and alloy composition in Si1-xGex/Si superstructures.