EXTREMELY HIGH-ELECTRON-MOBILITY IN SI SIGE MODULATION-DOPED HETEROSTRUCTURES/

Authors
ISMAIL K ARAFA M SAENGER KL CHU JO MEYERSON BS
Citation
K. Ismail et al., EXTREMELY HIGH-ELECTRON-MOBILITY IN SI SIGE MODULATION-DOPED HETEROSTRUCTURES/, Applied physics letters, 66(9), 1995, pp. 1077-1079
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
9
Year of publication
1995
Pages
1077 - 1079
Database
ISI
SICI code
0003-6951(1995)66:9<1077:EHISSM>2.0.ZU;2-2