P-TYPE CONDUCTION IN MG-DOPED GA0.91IN0.09N GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Authors
YAMASAKI S ASAMI S SHIBATA N KOIKE M MANABE K TANAKA T AMANO H AKASAKI I
Citation
S. Yamasaki et al., P-TYPE CONDUCTION IN MG-DOPED GA0.91IN0.09N GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 66(9), 1995, pp. 1112-1113
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
9
Year of publication
1995
Pages
1112 - 1113
Database
ISI
SICI code
0003-6951(1995)66:9<1112:PCIMGG>2.0.ZU;2-2