NOVEL DESIGN OF ALGAINAS-INP LASERS OPERATING AT 1.3-MU-M

A novel design of AlGaInAs-InP lasers operating at 1.3 mu m is propose d, A distinctive attribute of the proposed design is that the AlInGaAs active region is surrounded by an AlInAs electron stopper layer on th e p-side and an InP hole stopper layer on the n-side. The stopper laye rs do not impede the carrier injection into the active region and at t he same time reduce the thermionic emission of carriers out of the act ive region, Utilization of stopper layers allows one to increase the v alue of internal quantum efficiency and to select the waveguide materi al corresponding to the optimum optical confinement factor value.