With elastic-recoil detection analysis (ERDA) we have measured the var
iation of the dispersion parameter alpha of hydrogen diffusion in undo
ped a-Si:H as a function of illumination intensities I (I=8 and 15 W/c
m2) at an annealing temperature T(a)=350-degrees-C. The alpha value in
the illuminated case was then compared to the alpha dark value. We fo
und that alpha increases with I. To our knowledge, this is the first o
bservation of this effect. The hydrogen diffusion mechanisms under int
ense illumination for both film types are discussed in the framework o
f existing models.