TRANSIENT PICOSECOND RAMAN STUDIES OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS

Authors
GRANN ED SHEIH SJ TSEN KT SANKEY OF GUNCER SE FERRY DK SALVADOR A BOTCHAREV A MORKOC H
Citation
Ed. Grann et al., TRANSIENT PICOSECOND RAMAN STUDIES OF HIGH-FIELD ELECTRON-TRANSPORT IN GAAS-BASED P-I-N NANOSTRUCTURE SEMICONDUCTORS, Physical review. B, Condensed matter, 51(3), 1995, pp. 1631-1641
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
3
Year of publication
1995
Pages
1631 - 1641
Database
ISI
SICI code
0163-1829(1995)51:3<1631:TPRSOH>2.0.ZU;2-O