The presence of intergrowth with a different spacing inside a layered
phase causes significant alterations in the X-ray diffraction pattern,
concerning both line positions and widths. An analysis of these chang
es, based on a Hendricks-Teller-type formalism yields estimates about
the defect nature, concentration and short-range order. The procedure
was exemplified by simulation of XRD patterns for Bi-based oxidic supe
rconductors, in which intergrowths of related phases are often present
inside the matrix phase.