ELECTRICAL EFFECTS ACCOMPANYING HIGH-TEMPERATURE DEFORMATION OF CSI CRYSTALS

Citation
Vv. Demchenko et al., ELECTRICAL EFFECTS ACCOMPANYING HIGH-TEMPERATURE DEFORMATION OF CSI CRYSTALS, Physica status solidi. a, Applied research, 147(1), 1995, pp. 67-74
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
147
Issue
1
Year of publication
1995
Pages
67 - 74
Database
ISI
SICI code
0031-8965(1995)147:1<67:EEAHDO>2.0.ZU;2-M
Abstract
Several electrical effects like surface polarization, ion and electron emission, and after-deformation thermo-stimulated depolarization (ADT SD) accompany the high-temperature deformation of CsI single crystals. From the dependencies of magnitude and polarity of induced current on degree and temperature of deformation it is concluded that positively charged dislocations and point defects of different types take part i n the high-temperature deformation of CsI single crystals. As a result spatial separation of the charges occurs in the field of point defect s, the number of their types being the larger, the higher the deformat ion temperature is.