DEPTH DISTRIBUTION OF BORON AND RADIATION DEFECTS IN SILICON DUAL IMPLANTED WITHG B+ AND N+ IONS

Silicon wafers (<100>, n-type) are implanted by 40 keV B+ ions to the doses of 1.2 x 10(14) or 1.2 x 10(15) cm-2 and then by 50 or 100 keV N + ions to the doses in the range of 1.2 x 10(14) to 1.2 x 10(15) cm-2. The depth profiles of the implanted boron atoms are obtained using th e B-10(n, alpha)Li-7 nuclear reaction. The distributions of radiation defects are studied by the RBS-channeling technique. The boron depth p rofiles show strong inward asymmetry which may be due to resisdual cha nneling. Additional nitrogen implantation almost does not affect the d istribution of implanted boron ions. The effects of the implantation d ose and energy of both B+ and N+ ions on the resulting damage formatio n in the dual implanted silicon are studied. Radiation (self) annealin g is observed in the case of high dose dual implantation with boron an d nitrogen ions.