PHOTOELECTRICAL PROPERTIES OF THE ANTHRACENE MONOCRYSTAL TETRACENE LAYER JUNCTION

Citation
R. Signerski et al., PHOTOELECTRICAL PROPERTIES OF THE ANTHRACENE MONOCRYSTAL TETRACENE LAYER JUNCTION, Physica status solidi. a, Applied research, 147(1), 1995, pp. 177-185
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
147
Issue
1
Year of publication
1995
Pages
177 - 185
Database
ISI
SICI code
0031-8965(1995)147:1<177:PPOTAM>2.0.ZU;2-R
Abstract
Transport of charge carriers through an insulator-insulator junction i s investigated. The junction is analysed theoretically, taking into ac count a potential barrier, diffusion of charge carriers, and illuminat ion. The theoretical dependences are experimentally verified for the a nthracene monocrystal-tetracene layer junction. The current-voltage ch aracteristics are shown to be of the j approximately U3 type, where U is the voltage applied to the sample. The current-light illumination c haracteristics are of the j approximately I0n type, where I0 is the in tensity of the incident light and the value of the exponent n < 1. The spectral characteristics of the junction are symbatic to the absorpti on coefficient of tetracene. The temperature dependence of the photocu rrent shows the height of the potential barrier at the anthracene-tetr acene junction to be determined by the difference between the ionizati on energies of these materials, i.e. about 0.4 eV.