X. Queralt et al., ERBIUM OXIDE THIN-FILMS ON SI(100) OBTAINED BY LASER-ABLATION AND ELECTRON-BEAM EVAPORATION, Applied surface science, 86(1-4), 1995, pp. 95-98
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Erbium oxide thin films have been obtained by laser ablation and elect
ron beam evaporation techniques on Si(100) substrates. The samples wer
e grown under different conditions of oxygen atmosphere and substrate
temperature without any oxidation process after deposition. The crysta
l structure has been studied by X-ray diffraction. Films obtained by l
aser ablation are highly textured in the [hhh] direction, although thi
s depends on the conditions of oxygen pressure and substrate temperatu
re. In order to study the depth composition profile of the thin films
and the interdiffusion of erbium metal and oxygen towards the silicon
substrates, X-ray photoelectron spectroscopy analyses have been carrie
d out.