We study the key parameters for pulsed laser deposition of ZnSe layers
on (100) GaAs or (111) CaF2 substrates. The crystalline and optical p
roperties of these epilayers are characterized by X-ray diffraction (X
RD), scanning electron microscopy (SEM), Rutherford back scattering (R
ES) and by optical spectroscopy. The ZnSe layers obtained are compared
to epilayers prepared by metal organic chemical vapor deposition (MOC
VD).