IN-SITU SPECTROSCOPIC ELLIPSOMETRY TO CONTROL THE GROWTH OF TI NITRIDE AND CARBIDE THIN-FILMS

Ln-situ spectroscopic ellipsometry (SE) was used to control the growth process of Ti nitrides (TiNy) and carbonitrides (TiCxNy). The TiNy (T iCxNy) thin films were deposited using Ti and (TiC) targets with DC (R F) reactive magnetron sputtering. The plasma energy of TIN, films was found to depend strongly on molar y whereas in TiCxNy films, a gradual change in their dielectric response was observed, changing from that of TiC to that of TiN due to replacement of carbon by nitrogen. Analyz ing the SE spectra we found the following: (a) Stoichiometric TiN film s were produced for N-2 flow rate (Phi(N2)) in the range from 1.9 seem to 4 seem, depending on the bias voltage V-b. (b) Increasing V-b from 0 to -120 V, the Phi(N2) range within which stoichiometric TiN was de posited, was expanded and (c) in-situ control of the N-2 content in Ti Ny, TiCxNy films is possible.