TUNABLE UV-FLASH KRYPTON LAMP ARRAY USEFUL FOR LARGE-AREA DEPOSITION AND IN-SITU UV ANNEALING OF SI-BASED DIELECTRICS

A low pressure VUV flashlamp at 100 Torr has been developed as a tool for 'cold' UV CVD and processing. The current density is related in a tunable fashion to the VUV spectral distribution (160-260 nm) up to 20 Hz. A high brightness (3400 W/Hz cm(2) sr) Kr flashtube was shown to be a superior VUV source to Xe and Ar for Si-based dielectrics. The VU V efficiency of the Kr flashlamp, operated at up to 10 kA/cm(2), is re latively high, up to 10%, in the spectral region. By setting four effi cient Kr flashtubes, in a separate cavity, a lamp source, together wit h the UV CVD system characteristics, are shown useful to overall 'cold ' processing, with focus on uniform large area, cleaning, and in situ deposition, up to 3% for 3 ''. The deposition rates are conveniently h igh, similar to 100 Angstrom/min at 350 degrees C, but well controllab le to obtain several dielectric thin films on m-V materials: silicon d ioxide, nitridised silicon dioxide, and silicon nitride. Device qualit y electrical and optical features for III-V technology are demonstrate d: a zero-hysteresis MIS-InP and as a proof of the passivation of GaAs surface, the MIS-GaAs capacitor.