EFFECT OF UV ANNEALING OF RADIATION-DAMAGE IN SIO2-FILMS

Authors
LISOVSKII IP LITOVCHENKO VG LOZINSKII VB
Citation
Ip. Lisovskii et al., EFFECT OF UV ANNEALING OF RADIATION-DAMAGE IN SIO2-FILMS, Applied surface science, 86(1-4), 1995, pp. 299-302
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
86
Issue
1-4
Year of publication
1995
Pages
299 - 302
Database
ISI
SICI code
0169-4332(1995)86:1-4<299:EOUAOR>2.0.ZU;2-0
Abstract
Using IR spectroscopy and spectral multiple-angle ellipsometry the inf luence of UV illumination is investigated on the structural characteri stics of thin SiO2 films subjected to low-energy ion bombardment. The effect of annihilation of radiation damage (oxygen vacancies) with UV quanta is found.:A brief discussion of the mechanism leading to light- assisted structural transformations is presented.