PHOTOLUMINESCENCE OF PULSED EXCIMER-LASER ANNEALED SB-IMPLANTED CDTE

Epitaxial thin films of CdTe on InSb have been implanted with Sb at do ses from 10(12) to 10(14) cm(-2) at 100 keV. Implantation at 77 K resu lts in a visible deterioration in the photoluminescence (PL) intensity , which can be restored to some extent for doses of 10(12) and 10(13) cm(-2) by annealing with a pulsed excimer laser (XeCl, 308 nm) in Ar ( 4 bar) at laser fluences as low as 80 mJ cm(-2). Laser fluences in exc ess of 120 mJ cm(-2) cause significant increases in both the total int ensity and the intensities of the excitonic features relative to other emissions. Material implanted to 10(14) cm(-2) shows very little enha ncement of the excitonic features even at 200 mJ cm(-2). Films implant ed at room temperature show much less disruption of the PL, indicating a high degree of self-annealing, but no additional transitions associ ated with Sb.