ARF LASER PHOTOLYSIS OF TETRAETHYL-SILANE AND TETRAVINYL-SILANE

Authors
POLA J PARSONS JP TAYLOR R
Citation
J. Pola et al., ARF LASER PHOTOLYSIS OF TETRAETHYL-SILANE AND TETRAVINYL-SILANE, Journal of organometallic chemistry, 489(1-2), 1995, pp. 9-11
Citations number
18
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Inorganic & Nuclear
Journal title
Journal of organometallic chemistry → ACNP
ISSN journal
0022328X
Volume
489
Issue
1-2
Year of publication
1995
Pages
9 - 11
Database
ISI
SICI code
0022-328X(1995)489:1-2<9:ALPOTA>2.0.ZU;2-V
Abstract
The ArF laser-induced photolysis of tetraethyl- and tetravinyl-silane (C2Hn)(4)Si, (n = 3 and 5), affords C2Hn-1 unsaturates and a silicon-c ontaining deposit. The reactions are suitable for use in low-temperatu re chemical vapour deposition of Si/C materials.