IN-SITU CHARACTERIZATION OF II-VI MOLECULAR-BEAM EPITAXY

Authors
GAINES JM PONZONI CA
Citation
Jm. Gaines et Ca. Ponzoni, IN-SITU CHARACTERIZATION OF II-VI MOLECULAR-BEAM EPITAXY, Physica status solidi. b, Basic research, 187(2), 1995, pp. 309-313
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
187
Issue
2
Year of publication
1995
Pages
309 - 313
Database
ISI
SICI code
0370-1972(1995)187:2<309:ICOIME>2.0.ZU;2-C
Abstract
In-situ monitoring of crystal growth can provide valuable information on growth processes and feedback to control growth. The use of reflect ion high-energy electron diffraction (RHEED) and cathodoluminescence ( CL) to examine molecular beam epitaxy (MBE) of II/VI wide-band-gap sem iconductors is described.