STUDY OF ZNSE-BASED LAYER STRUCTURES FOR BLUE-GREEN LASER-DIODES

The possibilities of developing ZnSe blue-green lasers with new materi als and layer structures are studied. In particular, it is considered: (i) the use of an ''inverted'' laser structure, n-on-p configuration, having p-type barrier reduction layers of III-V compound semiconducto rs which are sandwiched between the substrate and the device and (ii) the use of ZnMnSSe as a cladding layer. Electronic band structures, cu rrent-voltage curves, and light-current curves are calculated for the lasers with inverted layer structures. Preliminary results of a study of ZnMnSSe layers grown by the molecular beam epitaxy method are also presented.