RAMAN-SCATTERING BY ACCEPTERS AND DONORS IN P-TYPE ZNSE

Raman spectroscopy is used to study dopants introduced into ZnSe to pr oduce p-type material. Special attention is paid to nitrogen-doped epi taxial layers and Raman scattering involving the electronic levels of nitrogen accepters is reported. In these layers spin-flip scattering b y electrons at a new type of donor centre at a depth of about 50 meV i s also observed. This new donor is believed to play an important role in the compensation process that limits the net acceptor concentration s attainable in this material.