HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR

Authors
SANGANERIA MK OZTURK MC VIOLETTE KE HARRIS G LEE CA MAHER DM
Citation
Mk. Sanganeria et al., HOW THERMAL BUDGET IN-SITU REMOVAL OF OXYGEN AND CARBON ON SILICON FOR SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR, Applied physics letters, 66(10), 1995, pp. 1255-1257
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
10
Year of publication
1995
Pages
1255 - 1257
Database
ISI
SICI code
0003-6951(1995)66:10<1255:HTBIRO>2.0.ZU;2-B