HIGH-POWER ERBIUM-DOPED FIBER LASER MODE-LOCKED BY A SEMICONDUCTOR SATURABLE ABSORBER

Citation
Bc. Barnett et al., HIGH-POWER ERBIUM-DOPED FIBER LASER MODE-LOCKED BY A SEMICONDUCTOR SATURABLE ABSORBER, Optics letters, 20(5), 1995, pp. 471-473
Citations number
8
Categorie Soggetti
Optics
Journal title
ISSN journal
01469592
Volume
20
Issue
5
Year of publication
1995
Pages
471 - 473
Database
ISI
SICI code
0146-9592(1995)20:5<471:HEFLMB>2.0.ZU;2-V
Abstract
Using an erbium-doped fiber laser (EDFL) passively mode lacked by a se miconductor saturable absorber, we generate 5.5-ps pulses of a 2.3-nJ/ pulse, which are more than three times higher in energy than for other reported EDFL's. We show that, by introduction of a Linear loss eleme nt within the cavity, multiple pulsing behavior at high pump powers ca n be suppressed. We also determine the saturable-absorber characterist ics-absorbance versus wavelength near band gap-that are necessary to p roduce short mode-locked pulses.