IN-SITU MEASUREMENT OF ELECTRIC-FIELDS AT INDIVIDUAL GRAIN-BOUNDARIESIN TIO2

Citation
Da. Bonnell et al., IN-SITU MEASUREMENT OF ELECTRIC-FIELDS AT INDIVIDUAL GRAIN-BOUNDARIESIN TIO2, Solid state ionics, 75, 1995, pp. 35-42
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
01672738
Volume
75
Year of publication
1995
Pages
35 - 42
Database
ISI
SICI code
0167-2738(1995)75:<35:IMOEAI>2.0.ZU;2-U
Abstract
Scanning probe microscopies have been used to characterize the variati ons in local electric fields near individual grain boundaries in TiO2. In-situ measurements of electric field gradients across a grain bound ary with a lateral in-plane applied bias were made with atomic force m icroscopy. The dependence of field variations near the boundaries on a pplied voltage has been quantified and compared with theory. The effec ts of measured enhancement due to variations in cantilever deflection are considered explicitly.