Scanning probe microscopies have been used to characterize the variati
ons in local electric fields near individual grain boundaries in TiO2.
In-situ measurements of electric field gradients across a grain bound
ary with a lateral in-plane applied bias were made with atomic force m
icroscopy. The dependence of field variations near the boundaries on a
pplied voltage has been quantified and compared with theory. The effec
ts of measured enhancement due to variations in cantilever deflection
are considered explicitly.