MODELING OF THE PROCESSES OF BUILDING UP SILICON LAYERS BY FAST IMPULSE HEATING OF BACKINGS BY INCOHERENT RADIATION

Authors
PROKOPEV EP ZOTOV VV STATSENKO VN
Citation
Ep. Prokopev et al., MODELING OF THE PROCESSES OF BUILDING UP SILICON LAYERS BY FAST IMPULSE HEATING OF BACKINGS BY INCOHERENT RADIATION, Russian journal of applied chemistry, 67(3), 1994, pp. 449-450
Citations number
11
Categorie Soggetti
Chemistry Applied
Journal title
Russian journal of applied chemistry → ACNP
ISSN journal
10704272
Volume
67
Issue
3
Year of publication
1994
Part
2
Pages
449 - 450
Database
ISI
SICI code
1070-4272(1994)67:3<449:MOTPOB>2.0.ZU;2-X
Abstract
The analysis of mass transfer processes during the building up of sili con layers in the hydride and chloride processes by fast impulse heati ng of backings by incoherent radiation was carried out. A formula for the calculation of the depths of silicon layers being built up in thes e processes was proposed.