GAS-DISCHARGE VISUALIZER OF INHOMOGENEITIES IN HIGH-RESISTANCE SEMICONDUCTORS

Authors
LEBEDEVA NN SALAMOV BG ORBUKH VI NAGIEV VM
Citation
Nn. Lebedeva et al., GAS-DISCHARGE VISUALIZER OF INHOMOGENEITIES IN HIGH-RESISTANCE SEMICONDUCTORS, Instruments and experimental techniques, 37(5), 1994, pp. 642-644
Citations number
4
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
37
Issue
5
Year of publication
1994
Part
2
Pages
642 - 644
Database
ISI
SICI code
0020-4412(1994)37:5<642:GVOIIH>2.0.ZU;2-T
Abstract
A device is described for monitoring resistivity inhomogeneities throu gh the spatial distribution of a gas discharge's glow intensity betwee n two transparent electrodes with a sample semiconductor plate in the gap between them. GaAs plates with a resistivity of 10(6)-10(8) Omega. cm 0.3-1.5 mm thick, and 20-60 mm in diameter have been tested. The di scharge gap is defined by a dielectric spacer 20-80 mu m thick. The ga p is filled with air at a pressure of 60-600 torr. The linear dimensio n of the detected inhomogeneity is similar to 100 mu m.