UNIFORM PYRAMID FORMATION ON ALKALINE-ETCHED POLISHED MONOCRYSTALLINE(100)SILICON-WAFERS

Citation
Jd. Hylton et al., UNIFORM PYRAMID FORMATION ON ALKALINE-ETCHED POLISHED MONOCRYSTALLINE(100)SILICON-WAFERS, Progress in photovoltaics, 4(6), 1996, pp. 435-438
Citations number
9
Categorie Soggetti
Energy & Fuels","Physics, Applied
Journal title
ISSN journal
10627995
Volume
4
Issue
6
Year of publication
1996
Pages
435 - 438
Database
ISI
SICI code
1062-7995(1996)4:6<435:UPFOAP>2.0.ZU;2-6
Abstract
Pyramidal texturing of monocrystalline silicon using alkaline etchants depends strongly upon the initial condition of the wafer surface and upon etching parameters, Texturization of polished wafers is often inc omplete, with non-textured areas arising to yield high values of refle ctance. A new technique is introduced for uniform pyramid formation on polished wafers, Nitrogen is used to expel dissolved oxygen in the et ch solution, since it has been observed that oxidizing agents act to e ncourage polished etch surfaces.