BIMETALLIC FE GA THIN-FILMS FROM SINGLE SOURCES - MOLECULAR CONTROL OF THE THIN-FILM STOICHIOMETRY/

Communication: Single source CVD precursors for FeGa thin films (e.g. see Fig.) are reported. The precursors are volatile, give clean deposi ts, and allow the use of unprecedented mild deposition conditions, at temperatures well below the decomposition temperature of the GaAs subs trate. It is also shown that single-source precursors for binary mater ials should be designed with the strongest bond joining the atoms whic h make up the final material.