IMAGING THE SURFACES OF NANOPOROUS SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY

Authors
ENZEL P HENDERSON GS OZIN GA BEDARD RL
Citation
P. Enzel et al., IMAGING THE SURFACES OF NANOPOROUS SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY, Advanced materials, 7(1), 1995, pp. 64-68
Citations number
25
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
7
Issue
1
Year of publication
1995
Pages
64 - 68
Database
ISI
SICI code
0935-9648(1995)7:1<64:ITSONS>2.0.ZU;2-Y
Abstract
Communication: Open framework semiconductors (tin(IV) sulfides and tin (IV) selenides) exhibiting bulk crystalline nanoporosity have been stu died using atomic force microscopy (AFM). The bulk porosity is reflect ed in the surface structures of these materials (see Fig.), and little reconstruction can be detected, important points in the assessment of the electrical transport characteristics of this new class of nanopor ous materials.