K. Itatani et al., SOME PROPERTIES OF MULLITE POWDERS PREPARED BY CHEMICAL-VAPOR-DEPOSITION .1. PREPARATION OF MULLITE POWDER, Journal of Materials Science, 30(5), 1995, pp. 1158-1165
The chemical vapour deposition (CVD) technique based upon reaction amo
ng aluminium chloride (AlCl3), silicon chloride (SiCl4) and oxygen was
applied to produce submicrometre-sized mullite (3Al(2)O(3) . 2SiO(2))
powder. The conditions for preparing the best crystalline mullite wer
e as follows: (i) the reaction temperature, 1200 degrees C; (ii) the f
low rate of carrier gas (Ar) of AlCl3, 0.3 dm(3) min(-1), and that of
SiCl4, 0.3 dm(3) min(-1); (iii) the sublimation temperature of AlCl3,
180 degrees C, and the evaporation temperature of SiCl4, 25 degrees C;
and (iv) the flow rate of oxygen, 0.9 dm(3) min(-1). The as-prepared
powder contained mullite, a small amount of gamma-Al2O3 (Al-Si spinel)
and amorphous material; this powder was composed of spherical primary
particles of similar to 0.05 mu m diameter. Although only mullite was
present at the calcination temperature of 1300 degrees C, a small amo
unt of alpha-Al2O3 was formed at 1400-1700 degrees C. Agglomeration du
e to primary particle growth started at temperatures exceeding 1400 de
grees C.