ULTRAFAST CARRIER DYNAMICS ON THE SI(100)2X1 SURFACE

Authors
JEONG S ZACHARIAS H BOKOR J
Citation
S. Jeong et al., ULTRAFAST CARRIER DYNAMICS ON THE SI(100)2X1 SURFACE, Physical review. B, Condensed matter, 54(24), 1996, pp. 17300-17303
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
24
Year of publication
1996
Pages
17300 - 17303
Database
ISI
SICI code
0163-1829(1996)54:24<17300:UCDOTS>2.0.ZU;2-Z
Abstract
We present a study of ultrafast carrier dynamics on the clean Si(100)2 X1 surface using time-resolved photoemission spectroscopy. A rapid the rmalization inside the surface band is observed, and the carrier relax ation occurs on a time scale of a few hundred femtoseconds to a few pi coseconds depending on the initial state energy. The relaxation time i ncreases as the initial state energy decreases with respect to the ban d minimum.