INTERACTION OF OXYGEN WITH A CS-MONOLAYER-COVERED SI(100) SURFACE

Citation
Qb. Lu et al., INTERACTION OF OXYGEN WITH A CS-MONOLAYER-COVERED SI(100) SURFACE, Physical review. B, Condensed matter, 54(24), 1996, pp. 17347-17350
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
54
Issue
24
Year of publication
1996
Pages
17347 - 17350
Database
ISI
SICI code
0163-1829(1996)54:24<17347:IOOWAC>2.0.ZU;2-O
Abstract
Oxygen adsorption on a Cs-monolayer-covered Si(100) surface has been s tudied by Li- ion spectroscopy and normally emitted secondary electron emission (SEE) spectroscopy. It is clearly shown that the oxygen lies above and below the Cs atoms, respectively, at low and high O exposur es, disproving the dipole model for the work function change. The init ial O adsorption induces a shoulder at the low-energy edge of the SEE spectra, indicating the existence of patches of a lower work function on the surface. The patches are explained as due to the CsO complexes formed by nonadiabatic chemisorption.