FORMATION OF BOUND EXCITONS BY PHOTOEXCITED CARRIERS IN P-TYPE GAAS REVEALED BY PICOSECOND LUMINESCENCE SPECTROSCOPY

Authors
KUMAR R VENGURLEKAR AS PRABHU SS DEFRANCESCHI S BELTRAM F
Citation
R. Kumar et al., FORMATION OF BOUND EXCITONS BY PHOTOEXCITED CARRIERS IN P-TYPE GAAS REVEALED BY PICOSECOND LUMINESCENCE SPECTROSCOPY, Physical review. B, Condensed matter, 54(24), 1996, pp. 17591-17595
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
24
Year of publication
1996
Pages
17591 - 17595
Database
ISI
SICI code
0163-1829(1996)54:24<17591:FOBEBP>2.0.ZU;2-6
Abstract
We report on the time evolution of photoluminescence (PL) spectra in m olecular-beam-epitaxy grown p-type GaAs (p = 5 x 10(16) cm(-3)), follo wing electron-hole pair excitation by picosecond laser pulses at densi ties of about 6 x 10(16) cm(-3). We perform both upconversion (UC) and photoexcitation-correlation (PEG) pi, measurements for delays up to 1 ns. The UC and PEC PL results imply significant formation of bound ex citons by electron-hole pairs in less than 1 ns.