The isopropyl alcohol gas sensitivity of LaCrO3 at 250 degrees C is fo
und to depend on the amount of TiO2 content and cation stoichiometric
ratio of the sample. The gas sensitivity enhancement is related to the
defect structure and electrical conduction behavior of p-type, donor-
doped semiconductive oxides. The high resistivity coupled with the inc
reasing point defects by the donor dopants are responsible for the hig
h gas sensitivity of TiO2 doped LaCrO3. It is believed that the positi
vely charged ionic-type defects created by dopants act as trapping sit
es to adsorb oxygen.