EFFECT OF DEFECT STRUCTURE ON GAS SENSITIVITY OF LACRO3

Authors
Citation
Rf. Huang et Wy. Howng, EFFECT OF DEFECT STRUCTURE ON GAS SENSITIVITY OF LACRO3, Journal of materials research, 11(12), 1996, pp. 3077-3082
Citations number
14
Categorie Soggetti
Material Science
ISSN journal
08842914
Volume
11
Issue
12
Year of publication
1996
Pages
3077 - 3082
Database
ISI
SICI code
0884-2914(1996)11:12<3077:EODSOG>2.0.ZU;2-9
Abstract
The isopropyl alcohol gas sensitivity of LaCrO3 at 250 degrees C is fo und to depend on the amount of TiO2 content and cation stoichiometric ratio of the sample. The gas sensitivity enhancement is related to the defect structure and electrical conduction behavior of p-type, donor- doped semiconductive oxides. The high resistivity coupled with the inc reasing point defects by the donor dopants are responsible for the hig h gas sensitivity of TiO2 doped LaCrO3. It is believed that the positi vely charged ionic-type defects created by dopants act as trapping sit es to adsorb oxygen.