In the present study, the microstructure and optical properties of a n
anostructured composite that consists of nanocrystalline GaN imbedded
in a poly(methyl methacrylate) thin film matrix (GaN/PMMA) are reporte
d. X-ray powder diffraction and high-resolution transmission electron
microscopy were performed to analyze the microstructure, while the opt
ical properties were measured by optical absorption and photoluminesce
nce. Microstructural analyses showed that GaN nanocrystallites imbedde
d in the PMMA matrix have a size of about 5.5 nm, and crystallize in t
he zinc-blende lattice (the lattice constant a(0) similar to 0.45 nm)
with a considerable fraction of structural defects such as nitrogen; v
acancies and stacking faults. Optical-absorption measurements indicate
that the band-gap energy of the GaN/PMMA composite is approximately 3
.51 eV.