PARTIAL AND PERFECT DISLOCATION NUCLEATION AT THE ONSET OF STRESS-RELAXATION IN IN0.60GA0.40AS ACTIVE LAYERS OF HIGH-MOBILITY TRANSISTORS GROWN ON INP

Authors
PEIRO F CORNET A MORANTE JR
Citation
F. Peiro et al., PARTIAL AND PERFECT DISLOCATION NUCLEATION AT THE ONSET OF STRESS-RELAXATION IN IN0.60GA0.40AS ACTIVE LAYERS OF HIGH-MOBILITY TRANSISTORS GROWN ON INP, Journal of applied physics, 77(10), 1995, pp. 4993-4996
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
10
Year of publication
1995
Pages
4993 - 4996
Database
ISI
SICI code
0021-8979(1995)77:10<4993:PAPDNA>2.0.ZU;2-O