ANALYSIS AND NUMERICAL MODELING OF SILICON-NITRIDE DEPOSITION IN A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR .1. BIDIMENSIONAL MODELING

Authors
DOLLET A COUDERC JP DESPAX B
Citation
A. Dollet et al., ANALYSIS AND NUMERICAL MODELING OF SILICON-NITRIDE DEPOSITION IN A PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR .1. BIDIMENSIONAL MODELING, Plasma sources science & technology, 4(1), 1995, pp. 94-106
Citations number
38
Categorie Soggetti
Phsycs, Fluid & Plasmas
Journal title
Plasma sources science & technology → ACNP
ISSN journal
09630252
Volume
4
Issue
1
Year of publication
1995
Pages
94 - 106
Database
ISI
SICI code
0963-0252(1995)4:1<94:AANMOS>2.0.ZU;2-Z
Abstract
A numerical model of silicon nitride deposition from an NH3-SiH4 mixtu re in a large-sized radiofrequency plasma reactor has been developed. A bidimensional treatment of transport phenomena, of major importance in this type of reactor, was used. Analysis of the modelling results s howed that aminosilane radicals were the main deposition precursors. T he steep decrease in deposition rate in the flow direction that was ob served can be explained by examining the calculated concentration prof iles.