DEFECT DISTRIBUTION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN SI SI(100), IMPROVED DEPTH PROFILING WITH MONOENERGETIC POSITRONS/

Authors
SZELES C ASOKAKUMAR P LYNN KG GOSSMANN HJ UNTERWALD FC BOONE T
Citation
C. Szeles et al., DEFECT DISTRIBUTION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN SI SI(100), IMPROVED DEPTH PROFILING WITH MONOENERGETIC POSITRONS/, Applied physics letters, 66(21), 1995, pp. 2855-2857
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
21
Year of publication
1995
Pages
2855 - 2857
Database
ISI
SICI code
0003-6951(1995)66:21<2855:DDILME>2.0.ZU;2-W