RANDOM TELEGRAPHIC SIGNALS IN SILICON BIPOLAR JUNCTION TRANSISTORS

Authors
NEUGROSCHEL A SAH CT CARROLL MS
Citation
A. Neugroschel et al., RANDOM TELEGRAPHIC SIGNALS IN SILICON BIPOLAR JUNCTION TRANSISTORS, Applied physics letters, 66(21), 1995, pp. 2879-2881
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
21
Year of publication
1995
Pages
2879 - 2881
Database
ISI
SICI code
0003-6951(1995)66:21<2879:RTSISB>2.0.ZU;2-#