GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE

Authors
HEGDE RI TOBIN PJ REID KG MAITI B AJURIA SA
Citation
Ri. Hegde et al., GROWTH AND SURFACE-CHEMISTRY OF OXYNITRIDE GATE DIELECTRIC USING NITRIC-OXIDE, Applied physics letters, 66(21), 1995, pp. 2882-2884
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
21
Year of publication
1995
Pages
2882 - 2884
Database
ISI
SICI code
0003-6951(1995)66:21<2882:GASOOG>2.0.ZU;2-5