SUBSTRATE BIAS EFFECT ON THE CAPTURE KINETICS OF RANDOM TELEGRAPH SIGNALS IN SUBMICRON P-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (VOL 66, PG 598, 1995)

Authors
SIMOEN E CLAEYS C
Citation
E. Simoen et C. Claeys, SUBSTRATE BIAS EFFECT ON THE CAPTURE KINETICS OF RANDOM TELEGRAPH SIGNALS IN SUBMICRON P-CHANNEL SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (VOL 66, PG 598, 1995), Applied physics letters, 66(21), 1995, pp. 2914-2914
Citations number
1
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
21
Year of publication
1995
Pages
2914 - 2914
Database
ISI
SICI code
0003-6951(1995)66:21<2914:SBEOTC>2.0.ZU;2-T