CHARACTER AND DISTRIBUTION OF VACANCIES IN CZOCHRALSKI-GROWN SILICON INGOTS

Authors
DANNEFAER S BRETAGNON T
Citation
S. Dannefaer et T. Bretagnon, CHARACTER AND DISTRIBUTION OF VACANCIES IN CZOCHRALSKI-GROWN SILICON INGOTS, Journal of applied physics, 77(11), 1995, pp. 5584-5588
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
11
Year of publication
1995
Pages
5584 - 5588
Database
ISI
SICI code
0021-8979(1995)77:11<5584:CADOVI>2.0.ZU;2-L