THERMAL ANNEALING OF LIGHT-INDUCED DEFECTS IN P-I-P AND N-I-N HYDROGENATED AMORPHOUS-SILICON STRUCTURES - INFLUENCE OF HOLE AND ELECTRON INJECTION

Authors
MEAUDRE M MEAUDRE R VIGNOLI S
Citation
M. Meaudre et al., THERMAL ANNEALING OF LIGHT-INDUCED DEFECTS IN P-I-P AND N-I-N HYDROGENATED AMORPHOUS-SILICON STRUCTURES - INFLUENCE OF HOLE AND ELECTRON INJECTION, Journal of applied physics, 77(11), 1995, pp. 5702-5705
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
11
Year of publication
1995
Pages
5702 - 5705
Database
ISI
SICI code
0021-8979(1995)77:11<5702:TAOLDI>2.0.ZU;2-7