TIME ANALYZED TRANSIENT SPECTROSCOPY AND MULTIPLE DX RELATED EMISSIONCENTERS IN SILICON DOPED ALXGA1-XAS

Authors
AGARWAL S MOHAPATRA YN SINGH VA SHARAN R
Citation
S. Agarwal et al., TIME ANALYZED TRANSIENT SPECTROSCOPY AND MULTIPLE DX RELATED EMISSIONCENTERS IN SILICON DOPED ALXGA1-XAS, Journal of applied physics, 77(11), 1995, pp. 5725-5729
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
11
Year of publication
1995
Pages
5725 - 5729
Database
ISI
SICI code
0021-8979(1995)77:11<5725:TATSAM>2.0.ZU;2-0