INTRINSIC ORIGIN AND COMPOSITION DEPENDENCE OF DEEP-LEVEL DEFECTS AT THE INVERTED GAAS ALXGA1-XAS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY/

Authors
KRISPIN P HEY R KOSTIAL H
Citation
P. Krispin et al., INTRINSIC ORIGIN AND COMPOSITION DEPENDENCE OF DEEP-LEVEL DEFECTS AT THE INVERTED GAAS ALXGA1-XAS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 77(11), 1995, pp. 5773-5781
Citations number
42
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
11
Year of publication
1995
Pages
5773 - 5781
Database
ISI
SICI code
0021-8979(1995)77:11<5773:IOACDO>2.0.ZU;2-E