LOW-TEMPERATURE PHOTOLUMINESCENCE OF TE-DOPED GASB GROWN BY LIQUID-PHASE ELECTROEPITAXY

Authors
IYER S SMALL L HEGDE SM BAJAJ KK ABULFADL A
Citation
S. Iyer et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF TE-DOPED GASB GROWN BY LIQUID-PHASE ELECTROEPITAXY, Journal of applied physics, 77(11), 1995, pp. 5902-5909
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
11
Year of publication
1995
Pages
5902 - 5909
Database
ISI
SICI code
0021-8979(1995)77:11<5902:LPOTGG>2.0.ZU;2-L