DIFFUSION OF IODINE INTO CDTE AT ROOM-TEMPERATURE

Studies on the diffusion of iodine into CdTe at a temperature of 20 de grees C using four widely differing types of diffusion sources are com pared and discussed. The concentration profiles were measured using ei ther a radiotracer sectioning (RTS) technique or secondary ion mass sp ectrometry (SIMS). The profiles were composed of four parts to which a computer package consisting of the sum of four complementary error fu nctions (erfc) gave accurate fits, providing four empirical values of the diffusivity, The diffusivities for the fastest component in all fo ur cases were in agreement (similar to 2 x 10(-14) cm(2) s(-1)) and we re consistent with previously published data. These results indicate t hat when iodine is diffused from the vapour It is not a suitable long- term-stable dopant in devices where sharp junctions are required.