HIGH-PRECISION FORMING OF MASKING COATINGS OF X-RAY MASKS DIRECTLY ONTHE MEMBRANES

Citation
Vs. Korsakov et al., HIGH-PRECISION FORMING OF MASKING COATINGS OF X-RAY MASKS DIRECTLY ONTHE MEMBRANES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 359(1-2), 1995, pp. 398-399
Citations number
3
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
359
Issue
1-2
Year of publication
1995
Pages
398 - 399
Database
ISI
SICI code
0168-9002(1995)359:1-2<398:HFOMCO>2.0.ZU;2-D
Abstract
X-ray masks have been made directly on 1.8-2.0 mu m thick suspended me mbranes with +/-0.02 mu m positioning accuracy in the plane of gold ma sking coating with a thickness of 0.5-0.8 mu m for 0.25-0.4 mu m eleme nts. This result has been achieved by implementing the mask after leav ing it freely suspended. The mask etching was done by reactive ion etc hing with a magnetron type source and scanning linear ion beams. The s tationary substrate holder on the basis of the Peltier effect allowed cooling the membrane with flowing helium.