Vs. Korsakov et al., HIGH-PRECISION FORMING OF MASKING COATINGS OF X-RAY MASKS DIRECTLY ONTHE MEMBRANES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 359(1-2), 1995, pp. 398-399
X-ray masks have been made directly on 1.8-2.0 mu m thick suspended me
mbranes with +/-0.02 mu m positioning accuracy in the plane of gold ma
sking coating with a thickness of 0.5-0.8 mu m for 0.25-0.4 mu m eleme
nts. This result has been achieved by implementing the mask after leav
ing it freely suspended. The mask etching was done by reactive ion etc
hing with a magnetron type source and scanning linear ion beams. The s
tationary substrate holder on the basis of the Peltier effect allowed
cooling the membrane with flowing helium.